製品情報

RA30H1317M1

型番：RA30H1317M1
ブランド：MIT

日付：13+
パッケージ：RF Power Transistor
原価：160
数量：32568
PDF電子ファイル：

注文電話：86755-83294757
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注釈：Origina in stock 原装现货

詳細な説明

RA30H1317M1

RF MOSFET MODULE 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO

DESCRIPTION

The RA30H1317M1 is a 30-watt RF MOSFET Amplifier

Module for 12.5-volt mobile radios that operate in the 135- to

175-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. The output power and

drain current increase as the gate voltage increases. With a gate

voltage around 3.5V (minimum), output power and drain current

increases substantially. The nominal output power becomes

available at 4V (typical) and 5V (maximum). At VGG=5V, the

typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power

with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD≅0 @ VDD=12.5V, VGG=0V)

• Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

• Broadband Frequency Range: 135-175MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=5V

• Module Size: 66 x 21 x 9.88 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power

with the input power

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批发与零售价位不同,无法一一明示,详情请通过邮件或客服咨询(国内销售部电话:0755-83957301,企业QQ2850151585), 由于电子元器件价格不稳定,时常有稍许变动,本公司未能及时调整,如您觉得售价不适，请与我们说明并适当议价,谢谢支持。

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