M29W640FT70N6E

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

 

 

Features summary

Supply Voltage 

 VCC = 2.7V to 3.6V for Program, Erase, 

Read

 VPP =12 V for Fast Program (optional)

Asynchronous Random/Page Read

 Page Width: 4 Words

 Page Access: 25ns

 Random Access: 60ns, 70ns

Programming Time

 10 µs per Byte/Word typical

 4 Words/8 Bytes Program

135 memory blocks

 1 Boot Block and 7 Parameter Blocks, 

8 KBytes each (Top or Bottom Location)

 127 Main Blocks, 64 KBytes each

Program/Erase Controller

 Embedded Byte/Word Program algorithms

Program/Erase Suspend and Resume

 Read from any Block during Program 

Suspend

 Read and Program another Block during

Erase Suspend

Unlock Bypass Program command

 Faster Production/Batch Programming

VPP/WP pin for Fast Program and Write Protect

Temporary Block Unprotection mode

Common Flash Interface

 64-bit Security Code

Extended Memory Block

 Extra block used as security block or to 

store additional information

Low power consumption

 Standby and Automatic Standby

100,000 Program/Erase cycles per block

 

 

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